Research
Research in the Center is focused on three integrated thrusts encompassing the synthesis and study of solution-based film precursors, investigation of these precursors in unique film chemistries, and application of results from precursor and film studies to the fabrication of high-performance electronic devices.
We study the fundamental chemistry of nanocluster synthesis; the transformation of these nanoclusters to solid films; interdiffusion, nucleation, and crystallization in films and nanolaminates; directed self-assembly in nanolaminates and related systems; and the conditions necessary to realize high-performance vertical-transport transistors. In addition, we work collaboratively with industry on a variety of related, directed projects.
Publications and presentations covering findings from these efforts are listed below.
Thrust I: We will deliver a toolkit of nanocluster and precursor chemistries comprising more than 15 elements, expanding to most of the abundant, environmentally benign metal atoms. Center participants have pioneered the use of organic-free nanoclusters and solid acids for the deposition of high-quality oxide thin films. The films have made possible the solution-fabrication of a variety of high-performance transistors and related devices. Our groups are synthesizing new clusters, examining their solution speciation, and probing properties relevant to film deposition. An example of a nanocluster is the Ga13 molecule shown to the right. |
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Thrust II: We will usethe toolkit developed in Thurst I to examine the chemical transformations that occur as the precursors condense into solid films. Previously unrealized compositions and properties will be produced with nanoscale spatial control, extending from highly sensitive inorganic lithography to compositionally-nanograded and/or nanostructured insulators that can be exploited in Thrust III. Center Investigators have produced for the first time very high quality oxide films from solution. These films have provided the first examples of solution-processed nanolaminates exhibiting exceptionally sharp interfaces and surfaces. The laminates are providing new ways to study solid-state chemical reactions and control composition, structure, and properties for device applications. The chemistries of many of the film precursors have been enhanced for direct lateral patterning without polymer resists. Precursors have been made sensitive to electron-beam, laser, deep UV, and EUV exposures. Inorganic materials have been patterned at < 15 nm with state-of-the-art line-width roughness (< 2 nm) and sensitivities that rival those of chemically amplified resists. |
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Thrust III: Is aimed at revolutionizing low-cost, large-area electronics by extending the frequency operation ceiling from ~1-10 MHz to GHz through fabrication of vertical transport transistors. This work will make it possible to incorporate high-speed wireless communications and other yet-to-be-imagined technologies onto very large substrates. As noted in the description of Thrust II, high-quality thin oxide films are now readily available via solution for incorporation into devices. Indeed, hundreds of thousands of thin-film transistors have now been produced on large-area substrates using these films. These thin-film transistors exhibit relatively modest capabilities with respect to circuit speed capabilities. In this thrust, we will use the ultra-thin, high- quality aspects of deposited films to build devices in a vertical fashion to realize ultra-short spacings between teh emitter and collector of a transistor. Since semicontuctor mobility is replaced by electron tunneling in these devices, performance can surpass conventional transistor technologies on a much simpler fabriction platform. |
PUBLICATIONS AND TECHNICAL PRESENTATIONS
PHASE I PUBLICATIONS
D. A. Keszler, “Transistors pick up steam,” Nature Materials 10, 9-10 (2011).
A. Telecky, P. Xie, J. K. Stowers, A. Grenville, B. Smith, and D. A. Keszler, “Photopatternable Inorganic Hardmask,” J. Vac. Sci. Tech. 28, C6S19-C6S22 (2010).
J. K. Stowers, S. Dhuey, F. Ogletree, D. Olynick, and D. A. Keszler, “Direct-Write Hard Mask for Nanopattern Transfer at High Aspect Ratios,” manuscript in preparation for submission to Nano Letters.
D. N. Weiss, S. T. Meyers, and D. A. Keszler, “All inorganic thermal nanoimprint resist and method” J. Vac. Sci. Tech. 28(4), 832-838 (2010).
D. N. Weiss, H.-C. Yuan, B. G. Lee, H. M. Branz, S. T. Meyers, A. Grenville, and D. A. Keszler, “Nanoimprinting for diffractive light trapping” J. Vac. Sci. Tech. 28, C6M98-C6M103 (2010).
N. Nguyen, K. Hill, M. Beekman, M. D. Anderson, I. M. Anderson, D. A. Keszler, and D. C. Johnson, “The Synthesis of Structural Isomers of Ferecrystals" manuscript in preparation for submission to J. Am. Chem. Soc.
Q. Lin, M. Smeller, C. L. Heideman, P. Zschack, M. Koyano, M. D. Anderson, R. Kykyneshi, D. A. Keszler, I. M. Anderson, D. C. Johnson, “Rational Synthesis and Characterization of a New Family of Low Thermal Conductivity Misfit Layer Compounds [(PbSe)0.99]m(WSe2)n,” Chem. Mater. 22(3), 1002-1009 (2010).
K. Jiang, S. T. Meyers, M. D. Anderson, D. C. Johnson, and D. A. Keszler, “Ultra-Thin Films and Nanolaminated Dielectrics from Aqueous Solutions,” manuscript in preparation for submission to Small.
K. Jiang, J. Anderson, K. Hoshino, D. Li, J. F. Wager, and D. A. Keszler, “Low-Energy Path to Dense HfO2 Thin Films from Aqueous Solution,” Chem. Mater. 2011, in press.
B. L. Clark and D. A. Keszler, “Metal Chalcogenide Aqueous Precursors and Processes to Form Metal Chalcogenide Films,” US Patent Application, Dec. 2009.
E. W. Cowell, III, C. C. Knutson, J. F. Wager, and D. A. Keszler, “Amorphous Metal/Oxide Nanolaminate,” ACS Appl. Mater. & Interf. 2(7), 1811-1813 (2010).
Z. L. Mensinger, D. A. Keszler, and D. W. Johnson, “Oligomeric Group 13 Hydroxide Compounds – A Rare but Varied Class of Molecules,” manuscript in preparation for submission to Chem. Soc. Rev.
Z. L. Mensinger, S. A. Betterton, M. K. Kamunde-Devonish, L. N. Zakharov, J. T. Gatlin, D. A. Keszler, and D. W. Johnson,. “Preparation of a Series of Group 13 Heterometallic Tridecameric Aqueous Clusters,” manuscript in preparation for submission to J. Am. Chem. Soc.
Z. L. Mensinger, L. N. Zakharov, and D. W. Johnson, “Triammonium hexahydroxo-octadecaoxohexamolybdogallate(III) heptahydrate,” Acta. Cryst. E64, i8-i9 (2008).
Z. L. Mensinger, L. N. Zakharov, and D. W. Johnson, “Synthesis and Crystal Structures of Infinite Indium- and Gallium-Acetate 1-D Chains with Coincidental Ethyl Acetate Hydrolysis,” Inorg. Chem. 48, 3505-3507 (2009).
W. Wang, L. N. Zakharov, D. W. Johnson, and S. Hayes “Efficient, Green Synthesis of [Al13(μ3-OH)6(μ-OH)18(H2O)24]15+ in Water,” manuscript submitted to Inorg. Chem.
J. T. Gatlin, Z. L. Mensinger, L. N. Zakharov, D. MacInnes, and D. W. Johnson, “Facile Synthesis of the Tridecameric Al13 Nanocluster Al13(µ3-OH)6(µ2-OH)18(H2O)24(NO3)15,” Inorg. Chem. 47, 1267-1269 (2008).
E. Rather, J. T. Gatlin, P. G. Nixon, T. Tsukamoto, V. Kravtsov, and D. W. Johnson, “A Simple Organic Reaction Mediates the Crystallization of the Inorganic Nanocluster [Ga13(µ3-OH)6(µ2-OH)18(H2O)24](NO3)15,” J. Am. Chem. Soc. 127, 3242-3243 (2005).
Z. L. Mensinger, J. T. Gatlin, S. T. Meyers, L. N. Zakharov, D. A. Keszler, and D. W. Johnson, Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin-Film Transistors,” Angew. Chem. Int. Ed. 47, 9484-9486 (2008).
BACKGROUND READING
Jiang, Kai; Zakutayev, Andriy; Stowers, Jason; Anderson, Michael D.; Tate, Janet; McIntyre, David H.; Johnson, David C.; Keszler, Douglas A.. Low-temperature, solution processing of TiO2 thin films and fabrication of multilayer dielectric optical elements. Solid State Sciences (2009), 11(9), 1692-1699.
Spies, J. A.; Schafer, R.; Wager, J. F.; Hersh, P.; Platt, H. A. S.; Keszler, D. A.; Schneider, G.; Kykyneshi, R.; Tate, J.; Liu, X.; Compaan, A. D.; Shafarman, W. N. pin double-heterojunction thin-film solar cell p-layer assessment. Solar Energy Materials & Solar Cells (2009), 93(8), 1296-1308.
Stowers, Jason; Keszler, Douglas A. High resolution, high sensitivity inorganic resists. Microelectronic Engineering (2009), 86(4-6), 730-733.
Mensinger, Zachary L.; Gatlin, Jason T.; Meyers, Stephen T.; Zakharov, Lev N.; Keszler, Douglas A.; Johnson, Darren W. Synthesis of heterometallic group 13 nanoclusters and inks for oxide thin-film transistors. Angewandte Chemie, International Edition (2008), 47(49), 9484-9486.
Meyers, Stephen T.; Anderson, Jeremy T.; Hung, Celia M.; Thompson, John; Wager, John F.; Keszler, Douglas A. Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs, Journal of the American Chemical Society, (2008), 130(51), 17603-17609.
Carter, T. C.; Yantasee, W.; Sangvanich, T.; Fryxell, G. E.; Johnson, D. W.; Addleman, R. S “New Functional Materials for Heavy Metal Sorption: ‘Supramolecular’ Attachment of Thiols to Mesoporous Silica Substrates” Chem. Commun. 2008, 5583-5585.
Seongwon Kim, Jian Min Zuo, Ngoc T. Nguyen, David C. Johnson, and David G. Cahill “The Structure of Layered WSe2 Thin Films with Ultralow Thermal Conductivity” Journal of Materials Research, 2008, 23, 1064-1067.
Qiyin Lin, Arwyn L. E. Smalley, David C. Johnson, J. Martin, G. S. Nolas “The Synthesis and Properties of CexCo4Ge6Se6“
Chemistry of Materials, 2007, 19, 6615-6620. Chemistry of Materials, 2007, 19, 6615-6620.
Qiyin Lin, Colby L. Heideman, Ngoc Nguyen, Paul Zschack, Catalin Chiritescu, David G. Cahill, David C. Johnson
“Designed Synthesis of Families of Misfit Layered Compounds” European Journal of Inorganic Chemistry, 2008, 15, 2382-2385
Tran M. Phung, Jacob M. Jensen, David C. Johnson, John J. Donovan and Brian G. McBurnett “Determination of the Composition of Ultra-Thin Ni-Si Films on Si: Constrained Modeling of Electron Probe Microanalysis and X-ray Reflectivity Data” X-ray Spectrometry 2008, 37, 608-611.
Colby Heideman, Ngoc Nyugen, Jonathan Hanni, Qiyin Lin, Scott Duncombe, David C. Johnson and Paul Zschack “The synthesis and characterization of new [(BiSe)1.10]m[NbSe2]n, [(PbSe)1.10]m[NbSe2]n, [(CeSe)1.14]m[NbSe2]n and [(PbSe)1.12]m[TaSe2]n misfit layered compounds” J. Solid State Chemistry 2008 181, 1701-1706J. Solid State Chemistry 2008 181, 1701-1706.
Catalin Chirtescu, David G. Cahill, Colby Heideman, Qiyin Lin, Clay Mortensen, Ngoc T. Nyugen, David C. Johnson, Raimar Rostek, and Harold Bottner “Low thermal conductivity in nanoscale layered materials synthesized by the method of modulcated elemental reactants” Journal of Applied Physics, 2008, 104, 33533-35538.Journal of Applied Physics, 2008, 104, 33533-35538.
J.F. Wager, D.A. Keszler, and R.E. Presley. "Transparent Electronics" Springer (2008).
D. Hong, G, Yerubandi, H. Q. Chiang, M. Spiegelberg, and J. F. Wager, “Electrical Modeling of Thin-Film Transistors,” Critical Reviews in Solid State and Materials Sciences 33, 101-132 (2008).
J.F. Wager, “Transparent electronics: Schottky barrier and heterojunction considerations,” Thin Solid Films 516, 1755-1764 (2008)
P. T. Erslev, H. Q. Chiang, D. Hong, J. F. Wager, and J. D. Cohen, “Electronic properties of amorphous zinc tin oxide films by junction capacitance methods,” J. Non-Crystalline Solids 354, 2801-2804 (2008).
H. Q. Chiang, B. R. McFarlane, D. Hong, R. E. Presley, and J. F. Wager, “Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors,” J. Non-Crystalline Solids 354, 2826-2830 (2008).
D. P. Heineck, B. R. McFarlane, and J. F. Wager, “Zinc tin oxide thin-film transistor enhancement/depletion inverter,” IEEE Electron Device Lett., 30, 514-516 (2009).
K. Hoshino, D. Hong, H. Q. Chiang, and J. F. Wager, “Constant-voltage bias-stress testing of a-IGZO thin-film transistors,” IEEE Trans. Electron Devices. 56, 1365-1370 (2009).
J. F. Wager, Invited Paper: “Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications,” Digest of Technical Papers – Society for Information Display International Symposium 40, 181-183 (2009).
J. F. Wager, “Oxide Thin-Film Transistors,” Handbook of Visual Display Technology, Volume 1, J. Chen, W. Cranton, and G. Raupp (Eds) (2010) ISBN: 978-3-540-79567-4.
TECHNICAL PRESENTATIONS
Douglas A. Keszler
Keszler, Douglas. Oxide thin films and devices for large-area electronics and optoelectronics. SPIE Photonics West, San Francisco, CA, January 2010.
Lai et al. Solution Processed IGZO-TFTs with Various Gate Insulator Layer Applied to Active Matrix LC., The 16th International Display Workshop, Miyazaki, Japan, December 2009.
Keszler, Douglas. Dual Function Solution-Processed Dielectrics for Large-Area Electronics and Patterning. 14th US-Japan Seminar on Dielectrics and Piezoelectric Materials, Welches, OR, October 2009.
Stowers et al. 100-keV exposure and pattern transfer. Micro Nano Engineering 35th International Conference, Ghent, Belgium, September 2009.
Meyers, Steven. Green Display Manufacturing: Solution Processed Multicomponent Oxides. Micro Nano Breakthrough Conference, September 2009.
Keszler, Douglas. Solution Processing for Transparent Electronics. European Materials Research Society, Strasbourg, France, June 2009.
Keszler, Douglas. Solution and Liquid Processing for Electronics and Optoelectronics. Washington State University, Pullman, WA, November 2008.
Darren W. Johnson
Mensinger, Z. L.; Kamunde-Devonish, M. K.; Zakharov, L. N.; Keszler, D. A.; Johnson D. W. “Synthesis and studies of a series of Group 13 nanocluster compounds” INOR-1364.Oral presentation at 239th ACS National Meeting, San Francisco, CA, March 25, 2010.
Johnson, D.W. “Nanoscale Arsenic Coordination Chemistry: A ‘Supramolecular’ Approach to Metal Remediation” Seattle University, Seattle, Washington, November 12, 2009.
Johnson, D.W. “Supramolecular Approach to Ligand and Functional Material Design for Toxic Metal Ion Sorption: A Route to Regenerable Materials?” University of Montana, Missoula, Montana, October 12, 2009.
Johnson, D.W. “Main Group Supramolecular Coordination Chemistry” Oregon State University, Corvallis, Oregon, May 4, 2009
Mensinger, Z. L. “Studies of Group 13 Metal Hydroxide Nanoclusters”. Oral presentation at Institute of Chemical Research of Catalonia, Tarragona, Spain, April 22, 2009.
Johnson, D.W. “Main Group Supramolecular Coordination Chemistry” University of Calgary, Calgary, Canada, April 17, 2009.
Johnson, D.W. “Supramolecular Main Group Coordination Chemistry: I. A Supramolecular Approach to Arsenic Chelation; II. Electron-Deficient Arenes as Anion Receptors” University of Texas, Austin, Texas, February 20, 2009 (Distinguished Alumni Lecturer).
Johnson, D.W. “Main Group Supramolecular Chemistry” University of California - Riverside, Riverside, California, February 4, 2009
Johnson, D.W. “Nanoscale Arsenic Coordination Chemistry: A ‘Supramolecular’ Approach to Metal Remediation” Pepperdine University, Malibu, California, January 28, 2009.
David C. Johnson
Johnson, D.C., Johnson, D.W., Keszler, D. Green Materials Chemistry. MSI Seminar, University of Oregon. January 14, 2011.
Johnson, D.C. Ferecrystals - Thermoelectric Materials Poised between the Crystalline and Amorphous States. 2011 DOE Thermoelectric Applications Workshop, San Diego ,CA. January 5, 2011.
Johnson, D.C. Designed Synthesis of Metastable Compounds from Amorphous Precursors: New Nanostructured Solids with Unprecedented Properties. Max Plank Institute for Solid State Research, Stuttgart, Germany. December 2, 2010.
Johnson, D.C. Green Chemistry in Semiconductor Processing. 2010 Electronics Packaging Symposium, GE Global Research. September 9, 2010.
Johnson, D.C. Misfit layered compounds - Nanocomposite thermoelectric materials. CIMTEC 5th Forum on New Materials, Montecatine, Terme, Tuscany, Italy. June 17, 2010.
Johnson, D.C. Green Chemistry in Semiconductor Processing. International Conference on Compound Semiconductors Manufacturing Technology -2010, Portland, Oregon, Plenary lecture. May 18, 2010.
Johnson, D.C. The targeted synthesis of new layered compounds [(T’X2)1+d]n(TX2)m and [(Mx)1+d]n(TX2)m. III International Workshop on Layered Materials, Bochum Germany. May 14, 2010.
Johnson, D.C. Build Well 2010, Innovative Materials for a Greener Planet. Panel: Emerging Materials for the Green Economy. Sausalito, CA January 2010.
Johnson, D.C. Nanoengineered Materials for Enhanced Thermoelectric Performance. Yonsei University. Seoul, Korea. January 6, 2009.
Johnson, D.C. Nanoengineered Materials for Enhanced Thermoelectric Performance. Korean Institute of Standards and Science. January 7, 2009.
Johnson, D.C. Nanoengineered Materials for Enhanced Thermoelectric Performance. Korean Institute of Ceramic Engineering and Technology. January 8, 2009.
Johnson, D.C. Kinetic Routes to Materials with Controlled Nanostructure. NSF Center for Chemical Innovation. January 11, 2009.
Johnson, D.C. Optimizing Nanostructured Thermoelectric Materials. ARL “Nanoarchitectures for Enhanced Performance” program review. February 11, 2009.
Johnson, D.C.. New Nanostructured Solids with Unprecedented Properties-Optimizing Thermal and Electronic-Properties of Misfit Layered Compounds. Greener Nano Conference, Eugene Oregon. March 3, 2009.
Johnson, D.C. New Nanostructured Solids with Unprecedented Properties. Research Triangle Institute, North Carolina. March 10, 2009.
Johnson, D.C. Kinetic Routes to Materials with Controlled Nanostructure. Max-Planck-Institute for Chemical Physics of Solids. March 24, 2009.
Johnson, D.C. Optimizing Electronic Properties of Misfit Layered Compounds. DPG Spring Meeting, Dresden, Germany. March 26, 2009.
Johnson, D.C. Optimizing Electronic Properties of Misfit Layered Compounds [(MSe)1+x]m[TSe2]n. Spring MRS Meeting, San Francisco, California. April 13, 2009.
Johnson, D.C. New Nanostructured Solids with Unprecedented Properties. Rutgers University, New Brunswick New Jersey. April 28, 2009.
Johnson, D.C. Nanolaminates – a tool box approach. Green Materials Workshop, Belknap Hot Springs, Oregon. May 11, 2009.
Johnson, D.C. Optimizing Electronic Properties of Misfit Layered Compounds. PACRIM Vancouver, British Columbia, Canada. June 4, 2009.
Johnson, D.C. Annealing studies of thin Bi2Te3 films under controlled overpressures of Te. International Thermoelectrics Conference 2009, Freiburg, Germany. July 27, 2009.
Johnson, D.C. Optimizing Electrical Properties of Misfit Layered Compounds. International Thermoelectrics Conference 2009, Freiburg, Germany. July 27, 2009.
Johnson, D.C. The Structures of New Misfit Layered Compounds [(MX)1+d]n[TX2]m. International Thermoelectrics Conference 2009, Freiburg, Germany. July 28, 2009.
Johnson, D.C. Building New Solid State Structures by Controlling Reaction Mechanism. National ACS meeting, Washington, DC. August 18, 2009.
Johnson, D.C. Nanolaminated Materials Structures. Portland State University ONAMI program review. September 24, 2009.
Johnson, D.C. Controlling Materials Properties via Nanostructure. Department of Energy Thermoelectric Applications Workshop, San Diego, CA. October 1, 2009.
Johnson, D.C. 7 Oct 08 New Nanostructured Solids with Unprecedented Properties.
International Thermoelectrics Conference, Jeju Island, Korea
Johnson, D.C. Nanoengineered Materials for Enhanced Thermoelectric Performance. JAIST Thermoelectric Workshop, Japan. February 26, 2008.
Johnson, D.C. Engineering Low Thermal Conductivity in Novel Thermoelectric Materials. University of Alberta, Edmonton CA. March 31, 2008.
Johnson, D.C. Nanoengineered Materials for Enhanced Thermoelectric Performance. Michigan State University. June 22, 2008.
Johnson, D.C. Nanoengineered Materials For Enhanced Performance. Solid State Chemistry Gordon Conference. July 27, 2008.
Johnson, D.C. Nanoengineered Materials For Enhanced Performance. Army Research Laboratory. September 16, 2008.
Johnson, D.C. Controlling Interfacial Nucleation – New Families of Misfit Layered compounds with Extraordinarily low thermal conductivity. University of New Mexico. September 19, 2008.
Johnson, D.C. Nanoengineered Materials For Enhanced Thermoelectrtic Performance. Materials Science and Technology 2008 Conference, Pittsburg PA. October 7, 2008.
Johnson, D.C. New Nanostructured Solids with Unprecedented Properties. Materials Research Society Fall 2008 Meeting, Boston, MA. December 3, 2008.
Johnson, D.C. New Nanostructured Solids with Unprecedented Properties. University of Delaware. December 5, 2008.
Johnson, D.C. Control of Electrical Properties of Misfit Layered Compounds. Direct Thermal-Electrical Energy Conversion Meeting, Asilomar CA. December 9, 2008.
John F. Wager
Waggoner, T., Triska, J., Hoshino, K., Conley, Jr., J. F., Wager, J. F. Zirconium Aluminum Oxide Nanolaminate Gate Dielectrics for Amorphous Oxide Semiconductor Thin Film Transistors. 38th Conference on the Physics and Chemistry of Surfaces and Interfaces, San Diego, CA. January 16-20, 2011.
Wager, J. F., Hoshino, K., Feller, L. E., and Presley, R. E. Low Temperature Processed Amorphous Oxide Semiconductor Thin-Film Transistors. MRS Fall Meeting, Boston, MA. November 29 – December 3, 2010.
N. Alimardani, N., Conley, Jr., J. F., Cowell III, E. W., Wager, J. F., Chin, M., Kilpatrick, S., Dubey, M. Stability and Bias Stressing of Metal/Insulator/Metal Diodes. 2010 IEEE International Integrated Reliability Workshop, Fallen Leaf Lake, CA. October 17 – 21, 2010.
Wager, J. F. Flexible Electronics: Hither and Thither. Plenary speaker at Transparent Conductive Materials 2010, Hersonissos, Crete. October 17 - 21, 2010.
Wager, J. F., Keszler, D. A., and Grenville, A. Solution-Processed Inorganic Thin-Films for Flexible and Printable Electronics. International Workshop on Printed & Flexible Electronics. Muju Resort, Korea. September 8 – 10, 2010.
Wager, J. F., Di Domenico, L. D., Williams, C. P., Keszler, D. A., and Grenville, A. Transparent Electronics and Emerging Solar Opportunities. Plenary speaker at SPIE's Solar Energy + Technology Symposium, San Diego, CA. August 1-5, 2010.
Wager, J. F. TFT Device Physics I: Static I-V Modeling. University of Cambridge, Cambridge, UK, November 3, 2009.
Wager, J. F. TFT Device Physics II: Electron Trapping. University of Cambridge, Cambridge, UK, November 3, 2009.
Wager, J. F. TFT Device Physics III: Dynamic Modeling. University of Cambridge, Cambridge, UK, November 3, 2009.
Wager, J. F. Transparent Electronics: Materials, Devices, and Applications. University of Cambridge, Cambridge, UK, November 9, 2009.Wager, J. F. Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Application. Society of Information Display 2009 SID International Symposium, San Antonio, TX, June 1-5, 2009.
Wager, J. F. Transparent Electronics: Materials, Devices, and Application. Northwestern University, Evanston, IL, June 3, 2009.
Wager, J. F. Transparent Electronics: Materials, Devices, and Applications. University of Washington, Seattle, WA. April 7, 2009.
Hoshino, K., Hong, D., Chiang, H.Q., and Wager, J. F. . Stability and temperature-dependence of indium gallium zinc oxide thin-film transistors. MRS Fall Meeting, Boston, MA, December 1-5, 2008.
Erslev, P.T., Hong, D., Wager, J. F. , and Cohen, J. D. Interface properties of ZTO and IGZO metal-insulator-semiconductor devices. MRS Fall Meeting, Boston, MA, December 1-5, 2008.
Sundholm, E.S., McFarlane, B., Kurahashi, P., Presley, R., Heineck, D., and Wager, J. F. . Amorphous oxide semiconductor circuits. MRS Fall Meeting, Boston, MA, December 1-5, 2008.
Wager, J. F. Electron Trapping in Transparent Thin-Film Transistors. 2nd International Symposium on Transparent Oxides, Hersonissos, Crete. October 22-26, 2008.Wager, J. F. Prospects for Flexible and/or Transparent Electronic. EMRS, Warsaw, Poland, September 15-19, 2008.
