1 J. David Cohen, “Electronic structure of a Si,Ge:H”, in Properties of Amorphous Silicon and Its Alloys, EMIS Datareview series, Tim Searle, ed., (INSPEC, London, 1998), pp. 180-188.
2 Chih-Chiang Chen, Fan Zhong, J.D. Cohen, Jeffrey C. Yang, and Subhendu Guha, “Evidence for charged defects in intrinsic glow discharge hydrogenated amorphous silicon-germanium alloys”, Physical Review B57, R4210 (1998).
3 J.David Cohen and Daewon Kwon, “Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: Implications for defect models”, J. Non-Cryst. Solids 227, 348 (1998).
4 Hyuk-Ryeol Park, Daewon Kwon, and J. David Cohen, “Electrode Interdependence and Hole Capacitance in Capacitance Voltage Measurements of a Si:H Thin Film Transistors”, J. Appl. Phys. 83, 8051 (1998).
5 K.C. Palinginis, Y. Lubianiker, J. D. Cohen, A. Ilie, B. Kleinsorge, and W.I. Milne, “Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques”, Appl. Phys. Lett. 74, 371 (1999).
6 S. Guha, J. Yang, D.L. Williamson, Y. Lubianiker, J.D. Cohen, and A.H. Mahan, “Structural, defect and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity”, Appl. Phys. Lett. 74, 1860 (1999).
7 D. Kwon, C.-C. Chen, and J.D. Cohen, H.-C. Jin, E. Hollar, I. Robertson, and J.R. Abelson, “Electronic transitions associated with small crystalline silicon inclusions within an amorphous silicon host”, Phys. Rev. B60, 4442 (1999).
8 Y. Lubianiker, J.D. Cohen, H.-C. Jin, and J.R. Abelson, “Effect of embedded microcrystallites on the light-induced degradation of hydrogenated amorphous silicon”, Phys. Rev. B60, 4434 (1999).
9 K.C. Palinginis, J.D. Cohen, A. Ilie, N.M.J. Conway, and W.I. Milne, “Defect band distributions in hydrogenated amorphous carbon/crystalline silicon heterostructures”, J. Non-Cryst. Solids 266-269, 1077 (2000).
10 Y. Lubianiker, J.D. Cohen, G. Lubarsky, Y. Rosenwaks, J. Yang, and S. Guha, “Structural and electronic properties of optimized a Si:H films”, J. Non-Cryst. Solids 266-269, 253 (2000).
11 K. C. Palinginis, J. David Cohen, J.C. Yang, and S. Guha, “Defect bands in a Si,Ge:H alloys with low Ge content”, J. Non-Cryst. Solids 266-269, 665 (2000).
12 Kimon C. Palinginis, J. David Cohen, Jeffrey C. Yang, and Subhendu Guha, “Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon”, Phys. Rev. B63, 201203(Rapids) (2001).
13 A.H. Mahan, Y. Xu, B.P. Nelson, R.S. Crandall, J.D. Cohen, K.C. Palinginis, and A.C. Gallagher, “Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150Å/sec”, Appl. Phys. Lett. 78, 3788 (2001).
14 J. David Cohen, Jennifer Heath, Kimon C. Palinginis, Jeffrey C. Yang, and Subhendu Guha, “Insights into the mechanisms of light-induced degradation from studies of defects in low Ge fraction a-Si,Ge:H alloys”, J. Non-Cryst. Solids 299-302, 449 (2002).
15 J.T. Heath, J.D. Cohen, W.N. Shafarman, D.X. Liao and A.A. Rockett, “Effect of Ga content on defect states in CuIn1-XGaXSe2 photovoltaic devices” Appl. Phys. Lett. 80, 4540 (2002).